中文摘要：

以绝缘栅双极型晶体管（IGBT）的物理结构为基础,建立并优化器件的电路仿真分析模型,并对器件电路模型的开关特性进行了模拟分析,结果显示该模型基本能反映出IGBT的开关特性及开关过程中的拖尾效应;进而把该器件电路模型引入基本Buck变换器中,并对IGBT在Buck变换器中的功率损耗进行了仿真分析,结果显示随着门极控制信号的开关频率或占空比的提高,器件的功率损耗逐渐变大,其变化趋势可以为Buck变换器设计及电路工作条件的选择提供参考。

英文摘要：

An insulated gate bipolar transistor （IGBT） model for simulation of circuits was built based on physical structure of IGBT. And the switching characteristics of the model was simulated and analyzed. The results show that the model can reflect the switching characteristics and the smearing effect in switching process of IGBT. Then the circuit model was put to basic Buck converter, and the power loss of IGBT was simulated. The results show that with the increaser of switch frequency or duty ratio for gate control signal, the power loss of the devices becomes larger. These trends could provide reference for Buck converter design and circuit working conditions.