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Thermal analysis of GaN laser diodes in a package structure
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN248.1[电子电信—物理电子学] TN405[电子电信—微电子学与固体电子学]
  • 作者机构：[1]State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China, [2]Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant Nos. 60506001, 60976045, 60836003, 60776047, and 61076119）, the National Basic Research Program of China （Grant No. 2007CB936700）, and the Funds for Outstanding Yong Researchers from the National Natural Science Foundation of China （Grant No. 60925017）.
作者： 冯美鑫[1,2], 张书明[2], 江德生[1], 刘建平[2], 王辉[2], 曾畅[1,2], 李增成[1,2], 王怀兵[2], 王峰[2], 杨辉[1,2]
关键词： 激光二极管, 封装结构, GAN, 热分析, 有限元素法, 包装材料, 参数选择, 配置, laser diodes, thermal, GaN
中文摘要：

Using the finite-element method,the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated.The effects of various parameters on the thermal characteristics are analysed,and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized.The obtained result provides a reference for the parameter selection of the package materials.

英文摘要：

Using the finite-element method, the thermal resistances of GaN laser diode devices in a TO 56 package for both epi-up configuration and epi-down configuration are calculated. The effects of various parameters on the thermal characteristics are analysed, and the thicknesses of the AlN submount for both epi-up configuration and epi-down configuration are optimized. The obtained result provides a reference for the parameter selection of the package materials.

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
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  • 被引量:406