位置：成果数据库 > 期刊 > 期刊详情页
Vertical channel nMOSFET with
  • 时间：0
  • 相关项目：用于SOC的高速低功耗器件研究
作者： F.L.Zhou,R.Huang*,X.Zhang
同期刊论文项目
用于SOC的高速低功耗器件研究
期刊论文 60 会议论文 47 著作 2
同项目期刊论文
Hot carrier degradation behavi
A novel idea: Using DTMOS to s
A New Method to Simulate Rando
Ultra-Thin Body SOI MOSFET 交
多晶硅注氮制备4.6nm超薄栅介质
Influences of H2+ and He+ co-i
Comparison of Device Performan
CIF格式挖空多边形切割为PG3600
CIF数据格式转换成PG3600数据格
纳米级精细线条图形的微细加工
Design guideline of an ultra-t
微纳加工技术在微纳电子器件领域
50nm SOI-DTMOS器件的性能,
UTB结构中计入量子化效应的解析
Program/erase injection curren
Thermally assisted Tunneling-d
A Model of single electron tra
Cost-Effective Integrated RF P
亚0.1μm栅长CMOS器件和电路的研
Quasi-SOI MOSFET: a novel arch
Scaling capability and design
Scaling Capability Improvement
Roughness of amorphous/crystal
Design Guideline of Ultra Thin
Corner Effects in Double-gate/
超薄SiO2栅介质厚度提取与分析
Atomistic simulation of defect
“Experimental Results on Drai
An Electrically separable self
Scaling of lowered source/drai
A Novel Nano-Scaled Device Con
LaAlO3 as tunnel dielectric fo
A two-dimensional physically-b
纳米晶非挥发性存储器研究进展
微纳加工技术在微纳电子器件领域的应用
Corner effects in double-gate/gate-all-around MOSFETs
NiSi金属栅电学特性的热稳定性研究
阻变式存储器存储机理
光学和电子束曝光系统之间的匹配与混合光刻技术
单电子晶体管的数值模拟及特性分析
CIF数据格式转换成PG3600数据格式的新切割算法
CIF格式挖空多边形切割为PG3600格式矩形的算法
Charge storage characteristics of hydrogenated nanocrystalline silicon film prepared by rapid thermal annealing
硅微机械FP腔器件机电特性模拟
纳米电子器件及其集成
厚膜P型宏孔多孔硅阳极氧化电流优化
Sub-100 nm NMOS Halo工艺优化分析
锗预非晶化注入对镍硅（NiSi）金属栅功函数的影响研究
Silicon-on-nothing MOSFETs fabricated with hydrogen and helium co-implantation