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中文摘要：
The ultrafast dynamic process in semiconductor Ge irradiated by the femtosecond laser pulses is numerically simulated on the basis of van Driel system. It is found that with the increase of depth, the carrier density and lattice temperature decrease, while the carrier temperature first increases and then drops. The laser fluence has a great influence on the ultrafast dynamical process in Ge. As the laser fluence remains a constant value, though the overall evolution of the carrier density and lattice temperature is almost independent of pulse duration and laser intensity, increasing the laser intensity will be more effective than increasing the pulse duration in the generation of carriers. Irradiating the Ge sample by the femtosecond double pulses, the ultrafast dynamical process of semiconductor can be affected by the temporal interval between the double pulses.
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