中文摘要：

本文研究了热压烧结条件对氧化铟锌（IZO）靶材和薄膜晶体管（TFT）性能的影响。以80％：20％（质量分数比）的ZnOg和In203的混合粉体为原料通过热压烧结法制备IZO靶材，以制备的靶材通过磁控溅射制备IZOTFT。X射线衍射（XRD）图谱以及扫描电镜（SEM）图像表明IZO靶材结晶性好，元素分布均匀。烧结温度为850℃时靶材呈现烧结致密化，900℃．60min条件下In20a的挥发破坏了靶材烧结致密化。提高烧结温度或延长烧结时间加速In向ZnO晶格的扩散以及空位向表面迁移，有利于靶材致密化以及形成InZnOx晶相。TFT器件表征结果表明低密度和过高密度靶材会恶化薄膜质量，降低器件性能，可见适当高密度的靶材对制备TFT至关重要，最终900℃-90min条件的靶材所制备的TFT性能最好，迁移率为16．25cm2．V-1．s-1。

英文摘要：

The sintering condition was studied how to influence the performance of indium-zinc-oxide （IZO） target and thin film transistor （TFT） in this paper. IZO targets was prepared by hot-pressing sintering using mixed power （20% （w, mass fraction） In203）, then fabricated TFT with above sintering targets. X-ray diffraction （XRD） patterns ＆ scanning electron microscopy （SEM） images showed targets had good crystallinity and elements were uniformly distributed. The target was typical densification process with sintering temperature of 850 ℃. The volatilization of Jn203 undermined the densification of the target, with condition of 900 ℃-60 min. It can be seen that increase of sintering temperature and elongation of preserving time could inhibit the In203 volatilization, facilitated the sintering densification of IZO target and formed the InZnOx crystal phase, thereby increased the density of the target. IZO TFTs＇ performance showed the sputtering deteriorates the film quality with low-density target, and the grain of the high-density target was slightly abnormal, which resulted in deterioration of the film uniformity, all reduced the performance of TFT. Therefore, anappropriate high-density target was essential for the preparation of IZO-TFT.