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Room-temperature nonsaturating magnetoresistance of intrinsic bulk silicon in high pulsed magnetic f
  • ISSN号：0003-6951
  • 期刊名称：Applied Physics Letters
  • 时间：2011.3.3
  • 页码：112113-
  • 相关项目：过渡金属掺杂的C/Si薄膜结构中的正负磁阻及正负磁阻转换
作者： Wu, L. H.|Zhang, X.|Vanacken, J.|Schildermans, N.|Wan, C. H.|Moshchalkov, V. V.|
同期刊论文项目
过渡金属掺杂的C/Si薄膜结构中的正负磁阻及正负磁阻转换
期刊论文 38 会议论文 28
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