中文摘要：

采用同步辐射白光形貌术观察了6H和4H—SiC单晶片中的微小多型结构。基于透射同步辐射形貌术的衍射几何和晶片的取向，计算了SiC晶体中3种主要多型在Lane像中对应不同反射的成像位置，并与实际结果进行了比较。鉴别出6H和4H—SiC单晶中分别存在着少量的4H—SiC和15R—SiC多型的寄生生长。

英文摘要：

Tiny polytypes in 6H-SiC and 4H-SiC single crystals were observed by synchrotron radiation white beam X-ray topography. Based on the diffraction geometry of transmission synchrotron topography and the orientation of the crystal slices,the positions of three main polytypes of 6H-, 4H- and 15R-SiC for different reflections in Laue image were calculated respectively. Comparing the measured with the calculated results,we identify that tiny polytype inclusions in 6H- and 4H-SiC are 4H- and 15R-SiC respectively.