中文摘要：

ZnO薄膜作为一种多功能半导体材料，近年来一直受到广泛关注。然而，如何制备高质量的p型ZnO薄膜是实现其实用化的关键。概括了p型掺杂困难的原因，并指出Ⅲ-Ⅴ族元素共掺杂可能是p型掺杂的最好方法。简单回顾了ZnO薄膜p型掺杂的研究现状，并对今后的发展趋势进行了展望。

英文摘要：

As a multifunctional semiconductor material, ZnO film has attracted much attention recently. However, how to prepare high-quality p type ZnO film is the key step for its applications. The reason for the difficulties of p-type doping is summarized and the co-doping method is mentioned as the possible best way of p-type doping. A brief review of the recent advances in p-type ZnO thin film is provided in the paper, and some problems to be solved by further research are also proposed.