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中文摘要：
光抽运半导体垂直外腔面发射激光器（Optically Pumped Semiconductor Vertical External Cavity SurfaceEmission Laser）的输出特性受到诸多参数的影响,理论分析和模拟显得尤为重要。设计了一种以808 nm二极管激光耦合模块为光抽运光源,In0.159Ga0.841As/GaAs0.94P0.06为增益介质的980 nm光抽运垂直外腔面发射激光器,并借助于PICS3D软件计算了器件各种特性参数。分析了芯片半径、量子阱的周期数以及外腔镜反射率对器件性能的影响,特别是对阈值和光-光转换效率的影响。模拟结果表明,器件的半径影响光-光转换效率。量子阱个数和外腔镜反射率对器件的输出功率和光-光转换效率都有影响,所以要根据实际需要,设计、生长结构和进行实验。
英文摘要：
The performance of optically pumped semiconductor vertical external-cavity surface emitting laser （OPS-VECSEL） is influenced by many parameters, so the theoretical analysis and simulation are very important. We constructed a 980 nm optically pumped semiconductor vertical external-cavity surface emitting laser （OPS-VECSEL） with active region of In0.159 Ga0.841 As/GaAs0.94 P0.06 system pumped by 808 nm laser diode module. Employing the PICS3D software, the characteristic parameters of OPS-VECSEL were calculated. The performances of device especially the threshold and the optical-optical conversion efficiency were influenced by the chip radius, the number of quantum well and the reflectivity of external-cavity mirror. Calculation and analysis show that the chip radius affect optical-optical conversion efficiency. The output power and optical- optical conversion efficiency are influenced by the number of quantum wells and the reflectivity of externalcavity mirror. Thus we should design and grow the laser structure according to the need.
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