中文摘要：

由于大 surface-to-volume 比率， lowdimensional 半导体的 optoelectronic 表演基于 nanostructure 的光电探测器在暴露的表面原则上取决于 chemisorption/photodesorption，但是显示出如此的效果的实际例子仍然是无法获得的。一些理论计算预言了 { 001 } 方面在 ₂ O ₃ 能有效地在照耀下面积累 photogenerated 洞，提供模型材料检验 nanowires (NW ) 切的方面是否能增加他们的 optoelectronic 表演。此处，我们在场使用的一个新奇基于 nanowire 的光电探测器的设计和构造在 ₂ 有四的 O ₃ NW 暴露了 { 001 } 水晶方面。光电探测器与优秀重覆性交付优秀 optoelectronic 性能，快反应速度，高光谱 responsivity (R ), 和高外部量效率(EQE ) 。R 和 EQE 价值象 4.8 一样高

英文摘要：

Due to a large surface-to-volume ratio, the optoelectronic performance of low- dimensional semiconductor nanostructure-based photodetectors depends in principle on chemisorption/photodesorption at the exposed surface, but practical examples that show such an effect are still unavailable. Some theoretical calculations have predicted that the {001} facets of In2O3 can effectively accumulate photogenerated holes under irradiation, providing a model material to examine whether the facet cutting of nanowires （NWs） can boost their optoelectronic performance. Herein, we present the design and construction of a novel nanowire-based photodetector using square In2O3 NWs with four exposed {001} crystal facets. The photodetector delivers excellent optoelectronic performance with excellent repeatability, fast response speed, high spectral responsivity （Rλ）, and high external quantum efficiency （EQE）. The Rλ and EQE values are as high as 4.8 × 10^6 A/W and 1.46 × 10^9%, respectively, which are larger than those of other popular semiconductor photodetectors. In addition, the square In2O3 NWs show hydrophobic wettability as manifested by a contact angle of 118° and a fast photoinduced reversible switching behavior is observed.