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Weak localization of bismuth cluster-decorated graphene and its spin-orbit interaction
  • ISSN号:2095-0462
  • 期刊名称:《物理学前沿:英文版》
  • 时间:0
  • 分类:O4[理学—物理]
  • 作者机构:[1]National Laboratory of Solid State Microstructures, Collaborative Innovation Center of Advanced Microstructures, and Department o/Physics, Nanjing University, Nanjing 210093, China, [2]State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050, China, [3]School of Electronic Science and Engineering and National Laboratory of Solid State Microstructures, Nanjing University, Nanjing 210093, China
  • 相关基金:We gratefully acknowledge financial sup- port from the National Key Projects for Basic Research of China (Grant No. 2013CB922103), the National Natural Sci- ence Foundation of China (Grant Nos. 91421109, 91622115, 11522432, 61176088, and 11274003), the Natural Science Foun- dation of Jiangsu Province (Grant Nos. BK20130054 and BK20160659), and the Fundamental Research Funds for the Cen- tral Universities. The opening Project of Wuhan National High Magnetic Field Center, supported the pulsed magnetic field.
中文摘要:

弱本地化(WL ) 大小在一张双性人装饰簇的 graphene 表被执行。费用集中被使经常,并且传导力修正的振幅在双性人簇免职以后被压制。当门和温度被改变时,详细 WL 数据被获得。用 E。McCanns 公式,纺纱松驰时间被提取,它被发现与散布时间的橡皮增加。这被归因于 Elliott-Yafet 旋转松驰并且 Kane-Mele 类型纺纱轨道联合(SOC ) 。SOC 力量由于第一免职被提高到 2.64 兆电子伏。范围效果在第二免职以后根据测量被讨论。

英文摘要:

Weak-localization (WL) measurements were performed in a Bi cluster-decorated graphene sheet. The charge concentration was kept constant, and the amplitude of the conductance correction was sup- pressed after the Bi-cluster deposition. Detailed WL data were obtained while the gate and temperature were changed. Using E. McCamfs ibrmula, the spin-relaxation time was extracted, which was found to increase with the elastic scattering time. This is attributed to the Elliott-Yafet spin relaxation and Kane-Mele type spin--orbit coupling (SOC). The SOC strength was enhanced to 2.64 meV as a result of the first deposition. The coverage effect is discussed according to the measurement after tim second deposition.

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期刊信息
  • 《物理学前沿:英文版》
  • 主管单位:中华人民共和国教育部
  • 主办单位:高等教育出版社
  • 主编:赵光达
  • 地址:北京市朝阳区惠新东街4号富盛大厦15层
  • 邮编:100029
  • 邮箱:
  • 电话:
  • 国际标准刊号:ISSN:2095-0462
  • 国内统一刊号:ISSN:11-5994/O4
  • 邮发代号:80-965
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  • 被引量:3