以铝(Al)粉末和三氯化硼(BCl_3)为前驱体,以H_2和Ar分别作为还原气体和保护气体,在高温水平电炉中采用化学气相沉积方法在Si衬底上原位制备了大量的AlB_(12)纳米棒.利用扫描电镜(SEM),高分辨透射电镜(HRTEM),选区电子衍射(SAED),能谱(EDS)表征了AlB_(12)纳米棒的形貌、晶体结构和成份.SEM结果表明纳米棒的直径在100~350 nm之间,长度从几百个纳米到几个微米,TEM、SAED和EDS结果显示AlB_(12)纳米棒沿着[020]方向生长.最后根据纳米线生长过程探讨了AlB_(12)纳米棒的自催化生长机理.
Chemical vapor deposition(CVD) method was utilized to synthesize single-crystal AlB_(12) nanorods on Si substrates in the high temperature horizontal furnace under H_2 and Ar atmosphere,using Al powders and BCl_3 gas as precursors without any catalysts.The morphology,crystal structures and components of the AlB_(12) were examined by scanning electron microscope(SEM),high-resolution transmission electron microscope(HRTEM),selected-area electron diffraction(SAED) and energy disperse spectrometer(EDS).SEM shows that the as-synthesized nanowires with the diameter ranging from 100nm to 350 nm and length ranging from several nanometers to several micrometers. HRTEM,SAED,and EDS reveal that the AlB_(12) nanorods are crystals elongated along the[020]direction.And growth mechanism based on the self-catalyst process is proposed for the formation of the AlB_(12) nanorods.