中文摘要：

采用自组装的方法制备99%高纯度半导体碳纳米管平行阵列条带，以金属钯和钪为非对称接触电极制备碳纳米管（CNT）薄膜晶体管（TFTs）器件。主要研究不同沟道长度碳纳米管薄膜晶体管器件的电输运特性和红外光电响应特性，分析了其中的载流子输运和光生载流子分离的物理机制。我们发现薄膜晶体管器件的电学性能和光电性能依赖于器件沟道长度（L）和碳纳米管的平均长度（LCNT）。当沟道长度小于碳纳米管的平均长度时，器件开关比最低；当沟道长度超过碳纳米管平均长度时，随着沟道长度的增加，器件开关比增加，光电流减小。相关研究结果为高纯碳纳米管薄膜晶体管器件在红外光探测器方面的进一步应用提供参考依据。

英文摘要：

We used the self-assembly method to form high purity （99%） semiconducting carbon nanotube （CNT） aligned arrays. Thin-film transistors （TFTs） were fabricated with asymmetric Pd and Sc electrodes. We studied the electronic transport characteristics and infrared photoelectronic properties of the TFTs with different channel lengths. The physical mechanism of carrier transport and the dissociation of photoexcited carries are also discussed. We found that the electronic and photoelectronic properties of the TFTs were dependent on the channel length and the average length of the CNTs. The on/off ratio of the device was the lowest when the channel length of the device （L） was less than the average length of the CNTs （LCNT）, and it increased with increasing L when L was larger than LCNT. In addition, the short circuit current of the device also decreased. These results provide an effective reference for further infrared detector applications based on high-purity semiconducting carbon nanotube TFTs.