中文摘要：

通过制备双边注入型单载流子器件ITO／TPD（NPB）／Cu，运用Fowler-Nordheim（F-N）公式变换，消除了载流子有效质量和器件厚度因素的影响，提高了测量的精度，简单准确地测定了ITO的功函数。实验测得值分别为4．85eV、4．88eV，与ITO的文献报道值接近。该方法操作简便，可以用来测定半导体和金属电极特别是合金电极的功函数。

英文摘要：

Devices ITO/TPD（NPB）/Cu were made. Through transforming Fowler-Nordheim（F-N） formula, the work function of ITO was measured by avoiding the influences of carrier masses and device thickness. We got the results 4.78 eV and 4.88 eV which were close to what references reported. This method simply brought to better results and provided a reference for measuring work-function of semiconductor and metal especially alloy electrodes.