中文摘要：

运用改进的无规元素等位移模型和玻恩-黄近似,结合电磁场的麦克斯韦方程和边界条件,研究了薄膜厚度对真空/极性二元晶体薄膜/极性三元混晶薄膜/半无限大极性二元半导体衬底构成的四层异质结系统的表面和界面声子极化激元的影响,以GaAs/Al0.4Ga0.6As四层异质结系统为例,获得了表面和界面声子极化激元模的频率随薄膜厚度的变化关系.结果表明：三元混晶四层异质结系统中存在七支表面和界面声子极化激元模,且当薄膜厚度发生变化时,只对位于其表面或界面处的极化激元模有影响,对其余的极化激元模几乎没有任何影响.

英文摘要：

Surface and interface phonon-polaritons in four layer heterostructure systems consis- ting of polar ternary mixed crystals are investigated with the modified random-element-isodisplace- ment model and the Born-Huang approximation, based on the Maxwell＇s equations with the usual boundary conditions. The numerical results of the surface and interface phonon-polariton frequencies as functions of the thickness of slabs in the GaAs/A10.4Ga0.6As heterostructure systems are obtained and discussed. It is shown that there are seven branches of surface and interface phonon-polariton modes in heterostructure systems,and the energies of surface or interface modes of the slab change with the thickness of slab,however,the other polariton modes almost not change.