基于热场发射-扩散模型,研究两相同器件结构的常规和倒置InGaP/GaAsHBT器件的性能差异。结论表明:倒置InGaP/GaAsHBT具有更好的开启电压和高频特性,而常规的InGaP/GaAsHBT具有更高的直流增益和更大的直流电流输出。
Based on thermionic-field-diffusion model, in which the drift-diffusion transport is accounted for the carriers in the bulk of the transistor while the thermionic emission and tunneling accounted for the carriers at the interface, the difference between collector-up InGaP/GaAs HBT's performance and emitter-up InGaP/GaAs HBT's performance has been analysised. The conclusion is made that collector-up InGaP/GaAs HBT has better turn-on voltage and high-frequency performance, and emmiter-up InGaP/GaAs HBT has better DC gain and larger output currents.