中文摘要：

KDP晶体生长缺陷是导致其锯切开裂的重要原因。本文采用有限元法建立了含缺陷的KDP晶体线锯切割数值计算模型，仿真分析了锯切过程中缺陷附近的应力分布状态，研究了缺陷尺寸及分布位置对应力分布的影响。结果表明，晶体缺陷引起局部应力集中，锯切过程中应力集中系数保持稳定，但当锯口通过缺陷时，应力集中系数激增。锯口处也存在应力集中，当锯口靠近缺陷时，两种应力集中的耦合效应增强，缺陷处最大拉应力增大；锯切至缺陷处时，耦合效应最强，最大拉应力增大到最大值。缺陷距离切除层越近，锯切过程中缺陷处最大拉应力的变化越剧烈；锯切末段切除层中的缺陷处具有更大的最大拉应力。

英文摘要：

The growth defect in KDP crystal is an important cause of its cracking during wire sawing. The numerical simulate model of the KDP crystal containing defect cut by wire saw were established by finite element method. The stress distribution near the defect during the process of sawing were analyzed, and the effect of defect size and position on the stress distribution has been further researched. The results showed that crystal defect leads to local stress concentration, and the stress concentration factor which remained stable during wire sawing increases sharply when the wire saw cut to the defect position. There is also stress concentration on the sawing kerf. The coupling effect between these two kinds of stress concentration is enhanced when the sawing kerf was close to the defect, so the maximum tensile stress near the defect increases and to the extreme when the wire saw cut to the defect position. The change of the maximum tensile stress was more intense when defect position was closer to the material removal layer. The maximum tensile stress was larger when the defect was located on the terminal sawing removal layer.