中文摘要：

室温下,通过直流磁控反应溅射在石英衬底上制备一系列钼掺杂氧化锌薄膜。分别采用X射线衍射（XRD）、原子力显微镜（AFM）、分光光度计及拉曼光谱仪研究了钼掺杂浓度对氧化锌薄膜结构、表面形貌、光学性能和表面等离子体特性的影响。XRD测试结果表明,零掺杂氧化锌薄膜结晶良好,呈c轴择优取向,掺杂后薄膜缺陷增多,结晶质量下降,当掺杂浓度达到3.93 Wt%时,薄膜由c轴择优取向的晶态转变为非晶态。AFM测试结果表明非晶态掺钼氧化锌薄膜表面光滑,粗糙度最低可达489 pm。透射光谱表明所有薄膜样品在可见光范围（400～760 nm）平均透过率均达到80%,禁带宽度随着掺杂浓度的提高从3.28 eV单调增加至3.60 eV。吸收光谱表明氧化锌薄膜表面等离子体共振吸收峰随钼掺杂量的增大发生蓝移,而拉曼光谱表明Mo重掺杂时ZnO薄膜表面拉曼散射信号强度显著降低。通过Mo掺杂获得非晶态氧化锌薄膜,拓宽了氧化锌薄膜材料的应用领域,同时研究了Mo掺杂浓度对氧化锌薄膜表面等离子体的调控作用,这对制备氧化锌基光子器件具有重要参考价值。

英文摘要：

Mo-doped zinc oxide （ZnO∶Mo） films were deposited with direct current magnetron sputtering on quartz substrates at room temperature .The effects of Mo doping content on the crystal structure ,surface microstructure ,optical properties and plasmon characteristics of the ZnO films were investigated with X-ray diffraction（XRD） ,atomic force microscopy （AFM ） ,Spec-trophotometer and Raman spectrometer .The XRD pattern reveals that pure ZnO film exhibits good crystallization and c-axis ori-ented while heavy doping leads to increasing film defects .That results decline the film crystalline quality .When Mo doping con-tent exceeds 3.93 Wt% ,the ZnO films transform c-axis oriented into amorphous .The AFM pattern indicates that the surface of amorphous MZO film is extraordinarily flat .The Rq is 498 pm .The transmittance spectra reveal that all samples have an average transmittance of 80% in the visible light range .The optical band gap energy （Eg ） increases from 3.28 to 3.60 eV as the Mo do-ping content increase .The absorbance spectrum indicates that ZnO surface plasmon resonance absorbance perk moves to short-wavelength as the Mo doping content increase .The Raman spectrum suggests that heavy Mo doping make the Raman scattering intensity decrease significantly .This paper obtains amorphous ZnO thin film by Mo doping .That broadens the application field of ZnO thin film materials .Meanwhile ,we study the effect of Mo doping concentration on ZnO thin films surface plasmon , which provides important reference value for the preparation of oxidized zinc base photonic devices .