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SrO/Si（100）表面去氧过程的研究
  • ISSN号：1000-3290
  • 期刊名称：《物理学报》
  • 时间：0
  • 分类：O613.72[理学—无机化学;理学—化学]
  • 作者机构：[1]中国科学技术大学微尺度物质科学国家实验室,合肥230026
  • 相关基金：国家自然科学基金（批准号：50721091 10825415 60771006和50532040）资助的课题
作者： 杜文汉[1]
关键词： SrO/Si表面, Sr/Si表面, 扫描隧道显微镜, 去氧过程, SrO/Si surface, Sr/Si surface, scanning tunneling microscopy, deoxidation process
中文摘要：

借助高温扫描隧道显微镜和光电子能谱技术,深入研究了SrO/Si（100）表面向Sr/Si（100）再构表面的动态转化过程.Sr/Si（100）再构表面在硅基氧化物外延生长中起重要作用.在该动态转化过程中,样品在500℃的退火温度下,表面出现SrO晶化的现象;在550—590℃的退火温度下,SrO/Si（100）开始向Sr/Si（100）转化,界面和表面上的氧以气态的SiO溢出,使得表面出现大量凹槽状缺陷.并且在此动态转化过程中表面的电子态表现出金属特性,这是由于表层硅原子发生断键重排,从而在表面出现悬挂键产生的.

英文摘要：

Using high temperature scanning tunneling microscopy （STM） and XPS,we investigated the dynamic process of SrO/Si（100） changing to Sr/Si（100） reconstructed surface,which plays a critical role in the growth of crystalline oxide on silicon substrate. During this process we find some interesting phenomenan：there appears crystalline SrO on Si（100） substrate at low annealing temperature of 500 ℃ ; at higher annealing temperature of 550—590 ℃ ,the oxygen in the SrO/Si（100） interface will react with silicon and form volatile SiO,leading the surface with a large quantity of line vacancies. In the later case,there appears abnormal metallic property of this surface,which results from dangling bonds of silicon atoms in the surface.

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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876