位置:成果数据库 > 期刊 > 期刊详情页
High-performance heterogeneous complementary inverters based on n-channel MoS2 and p-channel SWCNT transistors
  • 时间:0
  • 分类:O[理学]
  • 作者机构:[1]Institute of Microelectronics, Tsinghua National Laboratory for Information Science and Technology (TNList), Tsinghua University, Beijing 100084, China, [2]Institute of Functional Nano and Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-based Functional Materials and Devices, Soochow University, Suzhou 215123, China
  • 相关基金:Acknowledgements This work was supported by the National Natural Science Foundation of China (Nos. 51672154, 51372130, and 61401251), Open Research Fund Program of the State Key Laboratory of Low-Dimensional Quantum Physics (No. KF201517), and Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices (No. KFJJ201402).
中文摘要:

异构的互补 inverters 双性人层铝二硫化物创作了(瞬间 2) 和围单人赛的 carbon-nanotube (SWCNT ) 联网被设计,并且 n 类型瞬间 2/p-type SWCNT inverters 与 backgated 结构被制作。地效果晶体管(联邦货物税) 分别地为瞬间 2 和 SWCNT 与大开/关比率基于 MoS2 和 SWCNT 网络显示出高电的性能直到 10 6 和 10 5 。MoS2/SWCNT 互补 inverters 展览 V -V 外面 发信号匹配并且与高山峰电压完成优秀表演 15 的获得,一些 nanowatts 的低静态力量的消费,和 0.45VDD 的高噪音边缘,它对未来逻辑电路应用程序合适。inverter 表演被瞬间 2-FETs 和 SWCNT 联邦货物税的隧道 width-to-length 比率(W/L ) 影响。因此, W/L 应该被优化完成在获得和电源消费之间的折衷。

英文摘要:

Heterogeneous complementary inverters composed of bi-layer molybdenum disulfide (MoS2) and single-walled carbon-nanotube (SWCNT) networks are designed, and n-type MoS2/p-type SWCNT inverters are fabricated with a backgated structure. Field-effect transistors (FETs) based on the MoS2 and SWCNT networks show high electrical performance with large ON/OFF ratios up to 106 and 105 for MoS2 and SWCNT, respectively. The MoS2/SWCNT complementary inverters exhibit Vin-Vout signal matching and achieve excellent performances with a high peak voltage gain of 15, a low static-power consumption of a few nanowatts, and a high noise margin of 0.45VDD, which are suitable for future logic-circuit applications. The inverter performances are affected by the channel width-to-length ratios (W/L) of the MOSR-FETs and SWCNT-FETs. Therefore, W/L should be optimized to achieve a tradeoff between the gain and the power consumption.

同期刊论文项目
同项目期刊论文