中文摘要：

g-C3N4是一种新型的稳定的半导体光催化材料,它可以通过热缩聚法、固相反应法、电化学沉积法和溶剂热法等制备.g-C3N4禁带宽度约为2.7 eV,吸收边在460 nm左右,具有合适的导带位置,可用作可见光响应制氢的光催化材料,但在实际应用中g-C3N4光催化性能较低,其原因可归纳为：（1）g-C3N4在吸收光子产生电子和空穴对后,光生载流子的传输速率较慢,容易在体相或表面复合,致使g-C3N4的量子效率较低;（2）材料在合成过程中易于结块,使g-C3N4的比表面积远小于理论值,严重削弱了g-C3N4光催化材料的制氢性能.目前已有很多关于g-C3N4改性的报道,但一些方法对材料的处理过程耗时较长或者合成过程较难控制.用助剂改性是提高光催化制氢活性的半导体材料的主要策略之一.合适的助剂可改进电荷分离和加速表面催化反应,从而提高光催化剂的制氢活性.虽然稀有金属或贵金属,如铂、金和银可大大提高g-C3N4的制氢速率,但由于其昂贵和稀缺性,因而应用严重受限.因此,开发成本低、储量丰富、高性能助剂来进一步提高制氢性能具有重要意义.NiS2来源丰富、价格低廉.它可在酸性和碱性的环境保持相对较高的稳定性,且其表面电子结构表现出类金属特性.但它较难与半导体光催化剂形成强耦合和界面,通常需要水热等条件下合成.实验表明,g-C3N4表面存在着大量的含氧官能团及未缩合的氨基基团,为表面接枝提供了丰富的反应活性位点,因而可利用g-C3N4表面均匀分布的含氧官能团等和Ni^2＋结合,再原位与S^2-反应,从而在g-C3N4上负载耦合紧密的NiS2助剂,进一步提高复合材料的光催化制氢活性.本文采用低温浸渍法制备了NiS2/g-C3N4光催化剂.NiS2助剂在温和的反应条件下与g-C3N4光催化剂复合,可以防止催化剂结构的破坏,同时使得助剂均匀地分散,并紧密结合在催化剂表面,从而大大提高?

英文摘要：

NiS2 is a promising cocatalyst to improve the photocatalytic performance of g-C3N4 for the production of H2.However,the synthesis of the NiS2 cocatalyst usually requires harsh conditions,which risks destroying the microstructures of the g-C3N4 photocatalysts.In this study,a facile and low-temperature（80 ℃） impregnation method was developed to prepare NiS2/g-C3N4 photocatalysts.First,the g-C3N4 powders were processed by the hydrothermal method in order to introduce oxygen-containing functional groups（such as-OH and-C0NH-） to the surface of g-C3N4.Then,the Ni^2＋ ions could be adsorbed near the g-C3N4 via strong electrostatic interaction between g-C3N4 and Ni^2＋ ions upon the addition of Ni（NO3）2 solution.Finally,NiS2 nanoparticles were formed on the surface of g-C3N4 upon the addition of TAA.It was found that the NiS2 nanoparticles were solidly and homogeneously grafted on the surface of g-C3N4,resulting in greatly improved photocatalytic H2production.When the amount of NiS2 was 3 wt%,the resultant NiS2/g-C3N4 photocatalyst showed the highest H2 evolution rate（116.343 μmol h^-1 g^-1）,which is significantly higher than that of the pure g-C3N4（3 μmol h^-1 g^-1）.Moreover,the results of a recycling test for the NiS2/g-C3N4（3 wt%）sample showed that this sample could maintain a stable and effective photocatalytic H2-evolution performance under visible-light irradiation.Based on the above results,a possible mechanism of the improved photocatalytic performance was proposed for the presented NiS2/g-C3N4 photocatalysts,in which the photogenerated electrons of g-C3N4 can be rapidly transferred to the NiS2 nanoparticles via the close and continuous contact between them;then,the photogenerated electrons rapidly react with H2O adsorbed on the surface of NiS2,which has a surficial metallic character and high catalytic activity,to produce H2.Considering the mild and facile synthesis method,the presented low-cost and highly efficient NiS2-modified g-C3N4 photocatalysts would have great potential for