中文摘要：

文章介绍了高阻硅衬底集成无源器件技术,分析了功分器等效集总参数模型,并设计了一款9.5-9.9GHz的高阻硅衬底集总参数Wilkinson功分器。基于ADS软件,可对功分器版图进行仿真优化设计。该款功分器尺寸〈1×0.5mm^2,插损〈0.5d B、隔离度〉20d B、回波损耗〉20d B。由于采用高阻硅衬底集成无源器件技术,功分器尺寸小、性能优越,且具有批量生产优势,应用前景广泛。

英文摘要：

High resistance silicon based integrated passive device technology was introduced, lumped –element power divider model was analyzed, and a Wilkinson power divider with band of 9.5-9.9GHz on high resistance silicon was designed in this paper. The layout of the divider can be optimized using ADS software. This divider with dimensions of 〈1×0.5mm^2, has insertion loss of 〈0.5d B, isolation characteristic of 〉20d B, and return loss of 〉20d B. Due to high resistance silicon based integrated passive device technology, the divider is small with excellent performance, and easy to be produced in mass, which can be used for a variety of applications.