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Effect of annealing on interfacial and band alignment characteristics of HfO2/SiO2 gate stacks on Ge
  • ISSN号：1071-1023
  • 期刊名称：Journal of Vacuum Science and Technology. Part B.
  • 时间：0
  • 页码：1-4
  • 相关项目：新型半导体沟道材料与高介电栅介质薄膜的界面调控与电学性能研究
作者： Li, Xue-Fei|Liu, Xiao-Jie|Fu, Ying-Ying|Li, Ai-Dong|Zhang, Wen-Qi|Li, Hui|Wu, Di|
同期刊论文项目
新型半导体沟道材料与高介电栅介质薄膜的界面调控与电学性能研究
期刊论文 17 会议论文 2
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