中文摘要：

采用固相烧结法制备了掺Sn的层状热电氧化物Bi2-y SnySr2Co2O9—δ（y=0、0．02、0．04、0．06、0．08、0．10）。XRD结果表明Bi-Sr-Co—O氧化物样品存在一定程度的织构。Seebeck系数为正，说明该氧化物为P型半导体。掺Sn后电导率和热导率均增大。对于Seebeck系数和功率因子，存在着掺Sn量的最优值，即Bi1．96 Sn0．04 Sr2CO2O9-δ。掺Sn样品的最高ZT值比未掺Sn样品提高了约2倍。

英文摘要：

A series of Sn doped Bi2-ySnySr2Co2O9-δ（y=0, 0.02, 0.04, 0.06, 0.08, 0.10） samples was synthesized by solid state reaction method. The XRD results demonstrate the preferred alignment of Bi-Sr-Co-O grains due to the layered structure of the compounds. The positive Seebeck coefficients reveal that Bi-Sr-Co-O is p-type conductive. The Sn-doping increases the electrical conductivity as well as the thermal conductivity, while the Bi1.96Sn0.04Sr2Co2O9-δ sample exhibits highest Seebeck coefficient and power factor among all the samples. A highest ZT value of 0.08 has been obtained at 773K for y=0.04, about two times higher than that of the BSCO sample without Sn doping.