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中文摘要：
文章主要是研究采用磁控溅射和电子束热蒸发两种制备方法来制备ZnO—TFT器件，并通过XRD和透射光谱来对样品的性质进行分析比较，得出采用溅射法制备的ZnO-TFT器件有源层的ZnO薄膜从结晶化程度、表面粗糙度及透过率都较采用电子束蒸发制得的ZnO薄膜优异，其有较好的c-axis（002）方向择优取向，器件的平均透过率在85％以上。并研究了退后处理对器件性能的影响，并发现快速热退火有利于薄膜的晶化，降低缺陷态密度。
英文摘要：
A novel transparent ZnO based on thin-film transistor was fabricated by rf-reactive magnetron sputtering and electron beam evaporating respectively. By comparisons of the sample through XRD and transmittance spectra, it was concluded that crystallization, surface modality and optical transmission of active layer of ZnO-TFT device by magnetron sputtering were better than device fabricated by electron beam evaporating, c-axis （002） oriented of the ZnO film got the best and average optical transmittance of the device reached upwards 85%. Influence to the device by anneal was also studied, we found that anneal make for crystallization of ZnO film and reduced density of defect states.
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