中文摘要：

把碲用作溶剂，我们由一个温度坡度答案生长方法在长度在直径和 70 公里种了 30 公里的 ZnTe 铸块锭。在 300 K 进行的霍尔测试显示成长得当的 ZnTe 展出 p 类型电导率，与约 10 ¹⁴ 厘米 ³, 的搬运人集中约 300 厘米 ² 的活动性

英文摘要：

Using tellurium as a solvent, we grew ZnTe ingots of 30 mm in diameter and 70 mm in length by a temperature gradient solution growth method. Hall tests conducted at 300 K indicated that the as-grown ZnTe exhibits p-type conductivity, with a carrier concentration of approximately 10^14cm^-3, a mobility of approximately 300 cm^2·V·s^-1, and a resistivity of approximately 10^2 Ω·cm. A simple and effective method was proposed for chemical surface texturization of ZnTe using an HF：H2O2：H2O etchant. Textures with the sizes of approximately 1μm were produced on {100}, {110}, and { 111}zn surfaces after etching. The etchant is also very promising in crystal characterization because of its strong anisotropic character and Te-phase selectivity.