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中文摘要：
在不同的气氛下，利用射频磁控溅射法在石英基片和硅片上制备了ZrW2O8薄膜。利用台阶仪和划痕仪测量了溅射薄膜的厚度和结合力，利用X射线衍射及原子力显微镜对薄膜的物相和表面形貌进行了分析和观察。初步研究了沉积条件对生长薄膜的厚度、附着力、相成分和表面形貌等的影响。结果表明：纯氩气下溅射的ZrW2O8薄膜最厚，膜基结合力随膜厚的增加而减小，溅射所得薄膜为非晶态，热处理后薄膜中出现了钨酸锆相，薄膜的表面形貌随气压的降低变得光滑。
英文摘要：
ZrW2O8 thin films were deposited on quartz and single crystal silicon substrates by radio frequency magnetron sputtering under different atmospheres. The thickness and cohesion of the films were measured by a surface profilometer and a scratching adhesion tester respectively. The phases of the films were characterized by X-ray diffraction. An atomic force microscope was used for the observation of the surface morphology of the films. The effect of deposition conditions on the thickness, cohesion, phase compositions and surface morphology of the growing films were studied. The results indicate that film deposited in pure Ar is the thickest. The cohesion between film and substrate is reduced with the increase of the thickness of the film, and the as-grown thin film is amorphous. ZrW2O8 phase appears after annealing, and the surface of the film becomes smooth when the pressure of the atmosphere decreases.
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