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Performance and analytical modelling of halo-doped surrounding gate MOSFETs
  • ISSN号：1674-1056
  • 期刊名称：《中国物理B：英文版》
  • 时间：0
  • 分类：TN386[电子电信—物理电子学]
  • 作者机构：[1]Department of Microelectronics, School of Electronics and Information Engineering, Xi'an Jiaotong University, Xi'an 710049, China
  • 相关基金：Project supported by the National Natural Science Foundation of China （Grant No 10771168）, the State Key Development Program for Basic Research of China （Grant No 2005CB321701） and Shaanxi Natural Science Foundation Program of China （Grant No SJ08-ZT13）.
作者： 李尊朝[1]
关键词： 金属氧化物半导体场效应晶体管, 紧凑模型, 电子器件, MOSFET, MOSFET, surrounding gate, compact model, halo
中文摘要：

E-mail： zcli@mail.xjtu.edu.cn

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期刊信息
  • 《中国物理B：英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京 中关村 中国科学院物理研究所内
  • 邮编：100080
  • 邮箱：
  • 电话：010-82649026 82649519
  • 国际标准刊号：ISSN：1674-1056
  • 国内统一刊号：ISSN：11-5639/O4
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:406