中文摘要：

采用自助熔剂缓冷法成功地生长出了Nd1.85Ce0.15CuO4-δ单晶，其零场下零电阻温度约为21K．在0—0．5T范围内分别测量了磁场平行和垂直样品表面的电阻转变曲线以及0．5T不同角度下的电阻转变曲线．结果显示磁场平行和垂直样品表面时的转变温度Tp随磁场的变化均服H=H0（1-Tp（h）/Tp（0））^2关系．0．5T不同角度下的转变温度Tp符合有效质量模型，即Tp∝H^1/2（cos^2θ＋sin^2θ/γ^2）^1/4．该单晶的各向异性因子γ约为45．

英文摘要：

Nd1.85Ce0.15CuO4-σ single crystals with zero-resistance temperature Tc0≈21K were successfully grown by self-flux slow cooling method. We have measured the resistivity transition curves along the c-axis in different fields parallel or perpendicular to the sample surface, respectively, and at fixed field H = 0.5T for various angles. The result shows that the field dependence of differential-resistance peak temperature Tp follows the formula H = H0 （ 1 - Tp （ h ） / Tp （0） ）^2 for H//c-axis and H//ab-plane, respectively. The angular dependence of peak temperature Tp can be scaled by the effective mass model as Tp ∝ H1/2 （cos^2θ ＋ sin^2θ/γ^2） 1/4 . The anisotropic parameter γ of the crystal is about 45.