中文摘要：

近年来,纳米技术逐渐被用来设计和制备硅锗（Si-Ge）热电材料和新型器件.为了提高Si-Ge 热电材料的热电性能,研究学者利用各种纳米结构对Si-Ge 热电材料进行了理论研究.其中,利用纳米线、超晶格和量子点等结构中的能带机理与散射机理,从理论上设计了降低Si-Ge 纳米结构热导率和提高其功率因子的途径.同时,高效的Si-Ge 纳米热电材料被制备出来,包括纳米块体材料的热电性能得到大幅度提高,室温下薄膜和纳米线的热电性能实现了重大突破.在高性能材料的基础上,新型Si-Ge 纳米热电器件的研发除了关注于制备工艺优化外,还包括传热结构和原型器件的设计.

英文摘要：

In recent years, a large number of nanotechnologies are performed to design and fabricate silicon germanium thermoelectric materials and novel devices. Band engineering and scattering mechanism theories have been taken accountto theoretical design new Si-Ge nanostructures, including nanowires, superlattice and quantum dot structure, withdecreasing thermal conductivity and increasing power factor. Experimentally, various Si-Ge nanostructures have beenproduced with improved thermoelectric performance such as nano-bulk, thin films, and nanowires. New-designthermoelectric devices not only focus on manufacture technology but also on heat transfer and novel structures.