中文摘要：

电子束诱导沉积技术已被证实可以实现各种材料的分形生长,但是目前尚未发现聚焦电子束辐照下低维纳米结构表面未受辐照位置的分形生长现象,造成了聚焦电子束诱导分形生长机理研究的空白与片面性.以透射电子显微镜中残留的有机气体分子为前驱体,室温下利用高能聚焦电子束辐照,研究了一维非晶SiOx纳米线表面未受辐照位置碳沉积的分形生长.利用高分辨透射电子显微镜对SiOx纳米线表面非晶碳的沉积过程进行原位观察,发现了SiOx纳米线表面未受辐照位置非晶碳的不均匀沉积及分形生长,并捕捉到了碳沉积分形生长过程的细节.同时对聚焦电子束诱导SiOx纳米线表面未受辐照位置非晶碳的不均匀沉积及分形生长机理进行了深入的探索.

英文摘要：

It has been proven that electron beam induced deposition technique can lead to fractal growth of some materials, while there is no report on the fractal growth on the unirradiated surface of low dimensional nanostructures as induced by focused electron beam irradiation. In this paper, the fractal growth on the unirradiated surface of amorphous SiOx nanowire was designedly in- vestigated via focused electron beam irradiation at room temperature, and the deposition details of amorphous carbon on the surface of SiOx nanowire was in-situ observed by a high resolution transmission electron microscope. It was found that a series of intriguing phenomena such as nonuniform deposition and fractal growth of amorphous carbon occured on the unirradiated surface of SiOx nanowire. More importantly, details of the fractal growth process of deposited carbon were also in-situ observed. Furthermore, the nonuniform deposition and fractal growth mechanisms of amorphous carbon occurred on the unirradiated sur- face of SiOx nanowire under focused electron beam irradiation were proposed and discussed.