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Highly efficient phosphorescent organic light-emitting diode with a nanometer-thick Ni silicide poly
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  • 相关项目：表面等离子激元增强的纳米硅场效应发光器件
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表面等离子激元增强的纳米硅场效应发光器件
期刊论文 15 会议论文 1
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Multilayered graphene used as anode of organic light emitting devices.
Fine structure and high intensity of photoluminescence from Er doped in Ni-Si-O compounds.
A Selective-Area Metal Bonding InGaAsP-Si Laser.
Efficient 1.3-mu m electroluminescence from high concentration boron-diffused silicon p(+)-n junctio
Effects of Ag Nanocrystals on Electroluminescence in Si Oxide Films.
Experimental observation of polarized electroluminescence from edge-emission organic light emitting
Er3+ infrared photo & electro-luminescence from Er-doped Si rich Si nitride film with varying Si and
Enhanced electroluminescence from nanoscale silicon p(+)-n junctions made with an anodic aluminum ox
Room temperature Er3+ 1.54 mu m electroluminescence from Si-rich erbium silicate deposited by magnet
Photo- and Electro-Luminescence at 1.54 mu m from Er(3+) in SiC:Er(2)O(3) Films and Structures.
Ni增强Er在富硅氮化硅薄膜中的光致发光
On-chip silicon light source： from photonics to plasmonics
Ag纳米颗粒对富Ag二氧化硅薄膜电致发光谱的影响
Electrically Pumped Room-Temperature Pulsed InGaAsP-Si Hybrid Lasers Based on Metal Bonding.