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中文摘要：
在正统单电子理论的基础上，使用主方程方法，对金属隧道结组成的单电子晶体管进行了I-Vg和I-Va特性曲线的数值模拟。在单电子晶体管中，电子能否隧穿通过势垒，主要是由电子隧穿引起的系统自由能的变化而决定的。文中从自由能量出发对器件特性进行分析，从而得到电容、电阻以及电压等参数对库仑台阶及电导振荡的影响。当两个结电阻不同时，能够看到明显的库仑台阶现象。具有较大结电阻的隧穿结，电容也较大时可以完善库仑台阶，优化单电子晶体管的曲线。
英文摘要：
The I-Va and I-Vg curves of single electron transistor composed of metal tunnel junctions are simulated using master equation method ,based on the orthodox theory. Whether an electron could tunnel through a barrier or not is determined by the increase of energy caused by tunneling. The I-V curves of single electron transistor are analyzed by studying the increase of energy. As a result,how the parameters such as capacitor C,resistance R and voltage （Va,Vg） effect on the characteristics of device is discussed. When the resistances of the two junctions are different,there will be obvious coulomb staircase in the I-V curve of SET. If the tunneling junction with larger resistance also has higher capacitance than that of the other,better I-V curve of SET could the obtained.
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