中文摘要：

根据半经典输运模型,考虑了GaAs的非抛物性能带结构和主要的散射机制,采用蒙特卡罗模拟方法计算了亚微米尺寸GaAs MESFET器件的输运性质和电流电压特性,分析了器件中电子密度、电场和迁移率的不均匀分布计算了不同尺寸栅长下的电子漂移速度和漏电流,分析了栅长尺寸对电子漂移速度和漏电流的影响。随着栅长尺寸的增加,栅下沟道的电子漂移速度减小,而且漏电流呈线性递减。

英文摘要：

The calculations of the electron transport and current-voltage properties of submicron GaAs MESFET device are made using a nonparabolic effective mass energy band model, Monte Carlo simulation that includes all of the major scattering mechanisms. It is obtained that the electron drift velocity, the electric field and the mobility distribute non-uniformly in the device. The influences of different gate lengths to the electron drift velocity and the drain current are analyzed. It is shown that the electron drift velocity decreases rapidly and the drain current decreases linearly with increasing gate length.