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High-average-power, high-repetition-rate tunable terahertz difference frequency generation with GaSe crystal pumped by 2 μm dual-wavelength intracavity KTP optical parametric oscillator
  • ISSN号:2327-9125
  • 期刊名称:《光子学研究:英文版》
  • 时间:0
  • 分类:TN753.91[电子电信—电路与系统]
  • 作者机构:School of Precision Instrument and Opto-electronics Engineering, Tianjin University, Key Laboratory of Opto-electronics Information Technology, Tianjin University, Ministry of Education, Institute of Neurosurgery, Southwest Hospital, Third Military Medical University, Department of Applied Physics, the Hong Kong Polytechnic University
  • 相关基金:National Basic Research Program of China(973)(2014CB339802,2015CB755403);National key research and development projects(2016YFC0101001);National Key Technology R&D Program of China(2014BAI04B05,2015BAI01B01);National Natural Science Foundation of China(NSFC)(61107086,61471257,81402067);Natural Science Foundation of Tianjin City(14JCQNJC02200);Postdoctoral Science Foundation of Chongqing(Xm2016021);Joint Incubation Project of Southwest Hospital(SWH2016LHJC-04,SWH2016LHJC-01);Science and Technology Support Program of Tianjin(13ZCZDSF02300)
中文摘要:

We have demonstrated a high-average-power,high-repetition-rate optical terahertz(THz)source based on difference frequency generation(DFG)in the GaSe crystal by using a near-degenerate 2μm intracavity KTP optical parametric oscillator as the pump source.The power of the 2μm dual-wavelength laser was up to 12.33 W with continuous tuning ranges of 1988.0–2196.2 nm/2278.4–2065.6 nm for two waves.Different GaSe cystal lengths have been experimentally investigated for the DFG THz source in order to optimize the THz output power,which was in good agreement with the theoretical analysis.Based on an 8 mm long GaSe crystal,the THz wave was continuously tuned from 0.21 to 3 THz.The maximum THz average power of 1.66μW was obtained at repetition rate of 10 kHz under 1.48 THz.The single pulse energy amounted to 166 pJ and the conversion efficiency from 2 μm laser to THz output was 1.68×10-6.The signal-to-noise ratio of the detected THz voltage was 23 dB.The acceptance angle of DFG in the GaSe crystal was measured to be 0.16°.

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期刊信息
  • 《光子学研究:英文版》
  • 主管单位:
  • 主办单位:中国科学院上海光学精密机械研究所
  • 主编:
  • 地址:上海市
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  • 邮箱:
  • 电话:021-
  • 国际标准刊号:ISSN:2327-9125
  • 国内统一刊号:ISSN:31-2126/O4
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  • 被引量:1