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正弦波导慢波结构的研究
  • ISSN号:1002-8935
  • 期刊名称:真空电子技术
  • 时间:0
  • 页码:17-22
  • 分类:TN817[电子电信—信息与通信工程] TS77[轻工技术与工程—制浆造纸工程]
  • 作者机构:[1]National Key Laboratory of Science and Technology on Vacuum Electronics, University of Electronic Science and Technology of China, Chengdu 610054, China
  • 相关基金:Project supported by the National Natural Science Foundation of China (Grant No. 60971038) and the Fundamental Research Funds for the Central Universities (Grant No. ZYGX2099Z003).
  • 相关项目:双负材料中反向切伦科夫辐射的基础理论研究
中文摘要:

The study on a miniaturized,low-voltage,wide-bandwidth,high-efficiency modified V-shaped microstrip meanderline slow-wave structure is presented.This structure is evolved from the original U-shaped microstrip meander-line slowwave structure,combining the advantages of a traditional microstrip and a rectangular helix.In this paper,simulations of the electromagnetic characteristics and the beam-wave interaction of this structure are carried out.Our study shows that when the design voltage and the current of a sheet electron beam are set to be 4700 V and 100 mA,respectively,this miniature millimeter-wave power amplifier is capable of delivering 160-W output power with a corresponding gain of 37.3 dB and a maximum interaction efficiency of 34% at 97 GHz.

英文摘要:

The study on a miniaturized, low-voltage, wide-bandwidth, high-efficiency modified V-shaped microstrip meander-line slow-wave structure is presented. This structure is evolved from the original U-shaped microstrip meander-line slow-wave structure, combining the advantages of a traditional microstrip and a rectangular helix. In this paper, simulations of the electromagnetic characteristics and the beam-wave interaction of this structure are carried out. Our study shows that when the design voltage and the current of a sheet electron beam are set to be 4700 V and 100 mA, respectively, this miniature millimeter-wave power amplifier is capable of delivering 160-W output power with a corresponding gain of 37.3 dB and a maximum interaction efficiency of 34% at 97 GHz.

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期刊信息
  • 《真空电子技术》
  • 中国科技核心期刊
  • 主管单位:中国电子科技集团公司
  • 主办单位:北京真空电子技术研究所
  • 主编:廖复疆
  • 地址:北京市朝阳区酒仙桥路13号
  • 邮编:100015
  • 邮箱:zhenkongdianzi@126.com
  • 电话:010-84560772 64361731-2231
  • 国际标准刊号:ISSN:1002-8935
  • 国内统一刊号:ISSN:11-2485/TN
  • 邮发代号:
  • 获奖情况:
  • 国内外数据库收录:
  • 被引量:2346