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CuInSe2和Cu（In，Ga）Se2薄膜的制备进展
  • ISSN号：1005-023X
  • 期刊名称：《材料导报》
  • 时间：0
  • 分类：TN304.2[电子电信—物理电子学] O611.4[理学—无机化学;理学—化学]
  • 作者机构：[1]东华大学材料科学与工程学院纤维材料改性国家重点实验室,上海201620
  • 相关基金：新世纪优秀人才支持计划;国家自然基金（50872020;50902021）;高等学校博士学科点专项科研基金（20090075120014）;上海市晨光计划（09CG27）;中央高校基本科研业务费专项资金;高等学校学科创新引智计划资助（111-2-04）
作者： 陈志钢[1], 马冠香[1], 唐明华[1], 胡俊青[1]
关键词： 铜铟硒, 铜铟镓硒, 薄膜, 制备方法, CulnSe2, Cu（In, Ga）Se2, thin film, preparation methods
中文摘要：

综述了CulnSe2（CIS）和Cu（In，Ga）Se2（CIGS）薄膜的最新制备和研究进展，重点论述了几种制备方法如热蒸发、喷涂热解、电化学沉积、溶解一旋涂、高温液相合成等对相应薄膜的形貌、结构、成分以及所组成太阳能电池光电性能的影响，探讨了这类薄膜太阳能电池存在的问题，展望了今后的研究方向。

英文摘要：

Advances in the preparation and research of CuInSe2 （CIS） and Cu（In, Ga）Se2 （CIGS） thin films are reviewed. The main attention is given to the effects of synthesis methods, including thermal evaporation, spray pyrolysis, electrochemical deposition, dissolution-spin coating and high temperature solution-based synthesis, on the morphologies, structures and compositions of the films and photoelectrical performances of the resulting CIS and CIGS solar cells. The present problems and research direction in the future are also discussed.

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期刊信息
  • 《材料导报：纳米与新材料专辑》
  • 主管单位:重庆西南信息有限公司(原科技部西南信息中心)
  • 主办单位:重庆西南信息有限公司(原科技部西南信息中心)
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  • 地址：重庆市渝北区洪湖西路18号
  • 邮编：401121
  • 邮箱：matreved@163.com
  • 电话：023-67398525
  • 国际标准刊号：ISSN：1005-023X
  • 国内统一刊号：ISSN：50-1078/TB
  • 邮发代号:
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  • 被引量:3397