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高迁移率InGaAs／InP量子阱中的有效g因子
  • ISSN号：1000-3290
  • 期刊名称：《物理学报》
  • 时间：0
  • 分类：O737[理学—晶体学]
  • 作者机构：[1]中国科学院上海技术物理研究所,红外物理国家重点实验室,上海200083, [2]湖北工业大学电气与电子工程学院,武汉430068, [3]华东师范大学信息科学技术学院,极化材料与器件教育部重点实验室,上海200241, [4]I拿大国家研究院微结构研究所,渥太华K1AOR6
  • 相关基金：国家重点基础研究发展计划（批准号：2012CB619204）,国家自然科学基金（批准号：60976093,10934007,11174306,11104073）,信息功能材料国家重点实验室开放课题和上海技术物理所创新专项（批准号：Q.ZY-5）资助的课题.
作者： 魏来明[1], 周远明[2], 俞国林[1], 高矿红[1,3], 刘新智[1], 林铁[1], 郭少令[1], 戴宁[1], 褚君浩[1,3], AustingDavidGuy
关键词： g, 因子, 量子阱, 磁阻, g-factor, quantum well, magnetoresistance
中文摘要：

利用化学束外延法制备了高迁移率的In0朋Ga0．47As／InP量子阱样品．在样品的低温磁输运测试中，观察到纵向磁阻的Shubnikov—deHass（SdH）振荡和零场自旋分裂引起的拍频．本文提出一种解析的方法，即通过同时拟合不同倾斜磁场下SdH振荡的傅里叶变换谱，得到有效g因子的大小．

英文摘要：

High-mobility lno.53Gao.47As/InP quantum well is fabricated by the chemical beam epitaxy technique. Clear Shubnikov-de Hass （SdH） oscillation and beating pattern due to zero-field spin splitting are observed by magnetotransport measurements at low temperature. We use an analytical method, involving the simultaneous fitting of fast Fourier transform spectra of SdH oscillations at different tilted fields, to extract the effective g-factor.

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期刊信息
  • 《物理学报》
  • 北大核心期刊（2011版）
  • 主管单位:中国科学院
  • 主办单位:中国物理学会 中国科学院物理研究所
  • 主编：欧阳钟灿
  • 地址：北京603信箱(中国科学院物理研究所)
  • 邮编：100190
  • 邮箱：apsoffice@iphy.ac.cn
  • 电话：010-82649026
  • 国际标准刊号：ISSN：1000-3290
  • 国内统一刊号：ISSN：11-1958/O4
  • 邮发代号:2-425
  • 获奖情况:
  • 1999年首届国家期刊奖,2000年中科院优秀期刊特等奖,2001年科技期刊最高方阵队双高期刊居中国期刊第12位
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  • 被引量:49876