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Simulation of growing GaN in vertical HVPE reactor
  • ISSN号：1674-7348
  • 期刊名称：Science China Physics,Mechanics & Astonomy
  • 时间：2010.1.1
  • 页码：72-75
  • 相关项目：宽禁带半导体极化诱导能带调控原理及器件应用
作者： 赵传正|修向前|张荣|谢自力 等|
同期刊论文项目
宽禁带半导体极化诱导能带调控原理及器件应用
期刊论文 95 会议论文 29 专利 6
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