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中文摘要：
摘要利用磁控溅射技术，在单晶Si衬底上生长了SiOx非晶薄膜。傅里叶变换红外吸收光谱（FTIR）显示，Siq非晶薄膜存在3个吸收谱带。研究发现，随着溅射功率的提高，薄膜中先后形成Si-Oy—Si4-y（0〈y≤4），Si6环以及无桥氧空位中心（NBOHC）缺陷等结构，这几种结构对应的Si-O-Si键的伸缩振动吸收、非对称伸缩振动吸收以及O-Si-O键的振动吸收是导致薄膜的FTIR光谱出现3个吸收谱带的根本原因。
英文摘要：
Amorohous SiOx films were deposited on Si substrates by magnetron sputtering technology. Three absorption bands of the SiOx films were detected by Fourier transform infrared spectroscopy. The authors＇ investigation shows that Si-Oy-Sh-y （0〈y≤4）, Sis rings, and non-bridging oxygen hole center defects were formed in the films with the sputtering power increasing.The appearance of the three absorption bands was due to the stretching and asymmetric stretching vibration of Si-O-Si bond and the vibration of O-Si-O bond corresponding to the above mentioned structures in the SiOx films.
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