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High-Performance Programmable Memory Devices Based on Co-Doped BaTiO3.
  • ISSN号：0935-9648
  • 期刊名称：Advanced Materials
  • 时间：2011
  • 页码：1351-
  • 相关项目：磁性调控成相研究和新型磁性相变材料探索
作者： Zhibo Yan|Yanyan Guo|Guoquan Zhang|J.-M. Liu|
同期刊论文项目
磁性调控成相研究和新型磁性相变材料探索
期刊论文 108 会议论文 28
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