中文摘要：

高度可靠、可弯曲的电介质为未来应用在灵活或可弯曲的电子设备被需要。六角形的硼氮化物(h-BN ) 能由于它的宽乐队差距被用作可弯曲的电介质。这里，我们由一个低压力化学药品蒸汽免职方法与可控制的厚度制作高质量的 h-BN 电影。我们作为电介质用 h-BN 电影表明一个平行板的电容器。h-BN 电容器与 9.0 MV/cm 的高故障地力量是可靠的。越过 h-BN 电影的通道电流对电介质的厚度相反地指数，它让电容显著地落下。h-BN 电容器显示出 6.8 F/cm2 的一个最好的特定的电容，它比计算的值高一个数量级。

英文摘要：

Highly reliable and bendable dielectrics are desired in flexible or bendable electronic devices for future applications. Hexagonal boron nitride （h-BN） can be used as bendable dielectric due to its wide band gap. Here, we fabricate high quality h-BN films with controllable thickness by a low pressure chemical vapor deposition method. We demonstrate a parallel-plate capacitor using h-BN film as the dielectric. The h-BN capacitors are reliable with a high breakdown field strength of -9.0 MV/cm. Tunneling current across the h-BN film is inversely exponential to the thickness of dielectric, which makes the capacitance drop significantly. The h-BN capacitor shows a best specific capacitance of 6.8 F/cm^2, which is one order of magnitude higher than the calculated value.