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中文摘要：
采用固相反应法制备了Te掺杂的TiCoSb基half-Hcuslcr化合物。X射线衍射分析表明，Te掺杂的TiCoSb化合物是单相。在300～850K的温度范围内测量了材料的电阻率、赛贝克系数和热导率。结果表明：未经掺杂的TiCoSb化合物是n型半导体，在高温下有很高的赛贝克系数。在Sb位掺杂Te后，材料的电阻率和赛贝克系数的绝对值随着掺杂量的增加明显降低。材料的热导率随着掺杂量的增加而呈小幅度减小。Te掺杂后材料ZT值提高，最高的ZT值比基体提高了5倍多。
英文摘要：
Half-Heusler compounds of Te-doped TiCoSb were prepared by solid-state reaction. XRD analysis confirmed that all the sample were crystallized in the single-phase. Their thermoelectric properties were measured in the temperature rang of 300-850 K. The un-doped TiCoSb compound shows n-type conduction and possesses high Seebeck coefficient at high temperatures. Te doping on Sb site results in a significant reduction of the electrical resistivity and Seebeck coefficient. The thermal conductivity also decreases little with increasing Te content. The maximum value of ZT is nearly 5 times larger than the un-doped TiCoSb compounds.
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