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On Different Process Schemes for MOSFETs With a Controllable NiSi-Based Metallic Source/Drain
  • ISSN号：0018-9383
  • 期刊名称：IEEE Transactions on Electron Devices
  • 时间：2011.7
  • 页码：1898-1906
  • 相关项目：超薄可控金属硅化物的形成工艺及机理研究
作者： Lu, Jun|Hultman, Lars|Ostling, Mikael|Zhang, Shi-Li|
同期刊论文项目
超薄可控金属硅化物的形成工艺及机理研究
期刊论文 22 会议论文 4
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