中文摘要：

利用电子迁移率和MOS管阈值电压对温度的变化呈反向趋势的原理,基于0.13μm标准CMOS工艺,设计实现了一款非带隙的基准源电路.Hspice仿真显示该基准能提供0.715V基准输出,并可以根据需要在0.4V～1V范围内进行调节.在-25℃～125℃范围内,温度系数为21.6ppm,在25℃时输出基准线性度为0.237%.

英文摘要：

In this paper a non-bandgap voltage reference was designed in a standard 0.13μm CMOS technology,based on element that electron mobility and threshold voltage have opposite temperature coefficients. The simulation results using by Hspice show that the output of proposed voltage reference is 0.715V and it can be adjusted from 0.4V to 1V. Within the temperature range from -25 ℃ to 125 ℃,a temperature coefficient of 21.6 ppm/ ℃ is achieved,and the line regulation at 25 ℃ is 0.237%/V.