中文摘要：

We report a successful tuning of the hole doping level over a wide range in high temperature superconductor Bi2Sr2CaCu2O8+δ（Bi2212） through successive in situ potassium（K） deposition. By taking high resolution angleresolved photoemission measurements on the Fermi surface and band structure of an overdoped Bi2212（Tc= 76 K） at different stages of K deposition, we found that the area of the hole-like Fermi surface around the Brillouin zone corner（p,p） shrinks with increasing K deposition. This indicates a continuous hole concentration change from initial 0.26 to eventual 0.09 after extensive K deposition, a net doping level change of 0.17 that makes it possible to bring Bi2212 from being originally overdoped, to optimally-doped, and eventually becoming heavily underdoped. The electronic behaviors with K deposition are consistent with those of Bi2212 samples with different hole doping levels. These results demonstrate that K deposition is an effective way of in situ controlling the hole concentration in Bi2212. This work opens a good way of studying the doping evolution of electronic structure and establishing the electronic phase diagram in Bi2212 that can be extended to other cuprate superconductors.

英文摘要：

We report a successful tuning of the hole doping level over a wide range in high temperature superconductor Bi2Sr2CaCu2O8＋δ （Bi2212） through successive in situ potassium （K） deposition. By taking high resolution angleresolved photoemission measurements on the Fermi surface and band structure of an overdoped Bi2212 （To = 76 K） at different stages of K deposition, we found that the area of the hole-like Fermi surface around the Brillouin zone corner （n,n） shrinks with increasing K deposition. This indicates a continuous hole concentration change from initial - 0.26 to eventual 0.09 after extensive K deposition, a net doping level change of 0.17 that makes it possible to bring Bi2212 from being originally overdoped, to optimally-doped, and even- tually becoming heavily underdoped. The electronic behaviors with K deposition are consistent with those of Bi2212 samples with different hole doping levels. These results demonstrate that K deposition is an effective way of in situ controlling the hole concentration in Bi2212. This work opens a good way of studying the doping evolution of electronic structure and establishing the electronic phase diagram in Bi2212 that can be extended to other cuprate superconductors.