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Rectifying behavior and photoinduced characteristic in La- doped BaSnO3/p-Si heterojunctions
  • ISSN号：1862-6300
  • 期刊名称：Physica Status Solidi A-Applications and Materials
  • 时间：2014.3
  • 页码：705-708
  • 相关项目：畴对单相多铁-锰氧化物异质结中光电特性的影响
作者： Luo, B. C.|Wang, J.|Cao, X. S.|Jin, K. X.|
同期刊论文项目
畴对单相多铁-锰氧化物异质结中光电特性的影响
期刊论文 36
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