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Ultrafast interlayer photocarrier transfer in graphene–MoSe2 van der Waals heterostructure
  • ISSN号:1674-1056
  • 期刊名称:《中国物理B:英文版》
  • 时间:0
  • 分类:O46[理学—电子物理学;理学—物理]
  • 作者机构:[1]北京交通大学发光与光信息技术教育部重点实验室,北京100044, [2]北京交通大学光电子技术研究所,北京100044
  • 相关基金:Chinese Natural Science Fund Project(61335006,61378073,61527817);Beijing Science and Technology Committee(Z151100003315006)
中文摘要:

研究了二甲基亚砜(DMSO)掺杂浓度对基于聚(3-己基噻吩)(P3HT)和(6,6)-苯基碳60丁酸甲酯(PCBM)为有源层的聚合物太阳能电池性能影响。结果表明,掺杂DMSO可以提高聚合物太阳能电池短路电流密度和填充因子。DMSO掺杂质量比为3%时,电池短路电流密度提高到7.88mA·cm-2,填充因子为55.5%。能量转换效率达到2.54%,相比没有掺杂DMSO的电池,能量转换效率提高了17%。傅里叶变换红外光谱被用于鉴定和分析掺杂DMSO对材料P3HT∶PCBM化学性质的影响。傅里叶变换红外光谱表明,掺杂后P3HT和PCBM的化学性质都没有改变。为分析掺杂DMSO改善器件能量转换效率的原因,通过紫外-可见光谱和电流密度-电压特性曲线分别表征器件的光吸收能力以及电致发光器件的载流子迁移率。与P3HT∶PCBM薄膜相比,P3HT∶PCBM∶DMSO薄膜在可见光范围内的吸收峰有明显红移且吸收强度增强。可见光吸收的改善是实现短路电流密度提高的有力保障。太阳能电池性能的增强是因为DMSO的掺杂提高了P3HT∶PCBM的载流子迁移率和吸收光谱宽度。

英文摘要:

The effect of dimethyl sulfoxide(DMSO)doping concentration on the performance of polymer solar cells(PSCs)based on poly(3-hexylthiophene)(P3HT)∶(6,6)-phenyl C60 butyric acid methyl ester(PCBM)as the active layer was investigated.The results suggest that the doping of DMSO can improve short-circuit current density(Jsc)and fill factor(FF)of the PSCs.The cell with 3% DMSO exhibits enhanced Jsc(7.88mA·cm-2),and FF(55.5%).The optimized power conversion efficiency(PCE)arrived to 2.54%,which is 17% higher than that of the cell without DMSO doping.The Fourier Transform infrared spectroscopy(FTIR)is used to demonstrate the effect of DMSO doping into P3HT∶PCBM on chemical properties.The presence of FTIR suggests that the chemical properties of P3 HT and PCBM have no changes.To investigate the causes of the PCE improvement after addition of DMSO,an enhanced light harvesting and charge carriers transport properties of electroluminescence devices were observed by UV-Visible spectra and J-V characteristics.The absorption peaks of P3HT∶PCBM∶DMSO thin film show a distinguished red shift and strong absorption compared to P3HT∶PCBM thin films in the visible light range.It was considered that the increase of the Jscwas supported by this phenomenon of UV-Visible absorption.The charge carrier mobility change of the P3HT∶DMSO films is studied by employing the donor-only devices.The increased performance should be attributed to the enhanced charge carrier mobility and widened absorption spectra of P3HT∶PCBM through doping DMSO.

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期刊信息
  • 《中国物理B:英文版》
  • 中国科技核心期刊
  • 主管单位:中国科学院
  • 主办单位:中国物理学会和中国科学院物理研究所
  • 主编:欧阳钟灿
  • 地址:北京 中关村 中国科学院物理研究所内
  • 邮编:100080
  • 邮箱:
  • 电话:010-82649026 82649519
  • 国际标准刊号:ISSN:1674-1056
  • 国内统一刊号:ISSN:11-5639/O4
  • 邮发代号:
  • 获奖情况:
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  • 被引量:406