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中文摘要：
使用一种新奇的稀土元素作为GaN纳米棒生长的催化剂，通过氨化溅射在Si（111）衬底上的Ga2O3／Tb薄膜成功合成了大规模的GaN纳米棒。采用扫描电子显微镜，X射线衍射，透射电子显微镜，高分辨透射电子显微镜和傅立叶红外吸收光谱来检测样品的形态，结构和成分。研究结果表明，合成的样品为六方纤锌矿结构的单晶GaN纳米棒。最后讨论了GaN纳米棒的生长机理。
英文摘要：
A novel rare earth seed was used as a catalyst to grow GaN nanorods. Large-scale GaN nanorods were synthesized successfully through ammoniating Ga203/Tb films sputtered on Si（111） substrates. Scanning electron microscopy, X-ray diffraction, transmission electron microscopy, high-resolution transmission electron microscopy and Fourier transformed infrared spectroscopy were used to characterize the morphology, structure and composition of the samples. The results demonstrate that the nanorods are single-crystal GaN with hexagonal wurtzite structure. The growth mechanism of GaN nanorods is also discussed.
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