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中文摘要：
基于UMC 0.25 μm BCD工艺,在传统带隙基准结构的基础上,设计了一种具有低功耗、高精度的基准,同时利用NMOS管工作在亚阈值区域时漏电流和栅极电压的指数特性,对基准温度特性曲线进行二阶补偿.仿真结果表明,电源电压5V时,静态电流功耗为3.16 μA;电源电压2.5V～5.5V,基准电压变化53 μV;温度在-40℃～130℃内,电路的温度系数为0.86＆#215;10-6/℃;三种工艺角下,低频时电路电源抑制比都小于-95 dB.
英文摘要：
A new bandgap reference voltage with low consumption and high-accuracy performance, which is based on UMC 0.25 μm BCD process and the traditional bandgap reference construct. It uses the exponential response curve between leakage current and grid voltage when the N type MOS-FET is working in the sub-threshold region to compensate the temperature characteristic curve. The simulation shows that quiescent current is 3.16 μA when power supply is 5 V. The change amplitude of reference voltage is 53 μV when the power supply is from 2.5 V to 5.5 V. The temperature coefficient is 0.86×10-6-/℃ from -40 % to 130 ℃. The PSRR is lower than-60 dB at the three process corner.
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